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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM :3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test unless otherwise specified conditions MIN TYP MAX UNIT V V V Ic=50 A,IE=0 Ic=1mA,IB=0 IE=50 A,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=0.1A IC=2A,IB=100mA VCE=2V,IC=0.5A ,f=100MHz VCB=10V,IE=0,f=1MHz 40 20 6 0.1 0.1 180 560 0.5 290 25 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 CFQ R 180-390 CFR S 270-560 CFS |
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